The characterisation and optimisation of TLC NAND flash memory using machine learning: A position paper

Sorcha Bennett, Joe Sullivan

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Flash memory is non-volatile and, while it is becoming ever more commonplace, it is not yet a complete replacement for hard disk drives. The physical layout of Flash means that it is more susceptible to degradation over time, leading to a limited lifetime of use. This paper will give an introduction to NAND Flash memory, followed by an overview of the relevant research on the reliability of MLC memory, conducted using Machine Learning (ML). The results obtained will then be used to characterise and optimise the reliability of TLC memory.

Original languageEnglish
Title of host publicationICAART 2013 - Proceedings of the 5th International Conference on Agents and Artificial Intelligence
Pages559-564
Number of pages6
Publication statusPublished - 2013
Event5th International Conference on Agents and Artificial Intelligence, ICAART 2013 - Barcelona, Spain
Duration: 15 Feb 201318 Feb 2013

Publication series

NameICAART 2013 - Proceedings of the 5th International Conference on Agents and Artificial Intelligence
Volume2

Conference

Conference5th International Conference on Agents and Artificial Intelligence, ICAART 2013
Country/TerritorySpain
CityBarcelona
Period15/02/1318/02/13

Keywords

  • Endurance
  • Flash memory
  • Machine learning (ML)
  • Multi-level cell (MIX)
  • NAND
  • NOR
  • Non-volatile memory
  • Reliability
  • Retention
  • Triple-level cell (TLC)
  • Wearout

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