@inproceedings{00c441956909443289e24da453984d1c,
title = "Nanoporous domains in n-InP anodized in KOH",
abstract = "A model of porous structure growth in semiconductors based on propagation of pores along the <111>A directions has been developed. The model predicts that pores originating at a surface pit lead to porous domains with a truncated tetrahedral shape. SEM and TEM were used to examine cross-sections of n-InP electrodes in the early stages of anodization in aqueous KOH and showed that pores propagate along the <111>A directions. Domain outlines observed in both TEM and SEM images are in excellent agreement with the model. The model is further supported by plan-view TEM and surface SEM images. Quantitative measurements of aspect ratios of the observed domains are in excellent agreement with the predicted values.",
author = "R. Lynch and C. O'Dwyer and D. Sutton and Newcomb, {S. B.} and Buckley, {D. N.}",
year = "2007",
doi = "10.1149/1.2731203",
language = "English",
isbn = "9781566775519",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "355--366",
booktitle = "ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface",
edition = "2",
note = "46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting ; Conference date: 06-05-2007 Through 10-05-2007",
}