Effect of electrolyte concentration on anodic nanoporous layer growth for n-InP in aqueous KOH

R. Lynch, C. O'Dwyer, D. N. Buckley, D. Sutton, S. B. Newcomb

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

24 Citations (Scopus)

Abstract

The surface morphology and sub-surface porous structure of (100) n-InP following anodization in 1 - 10 mol dm-3 aqueous KOH were studied using linear sweep voltammetry (LSV) in combination with scanning electron microscopy (SEM) and transmission electron microscopy (TEM). LSV of n-InP in 10 mol dm-3 KOH showed a single anodic current peak at 0.41 V. As the concentration of electrolyte was decreased, the peak increased in current density and charge and shifted to more positive potentials; eventually individual peaks were no longer discernable. Porous layers were observed in SEM cross-sections following linear potential sweeps and the porous layer thickness increased significantly with decreasing KOH concentration, reaching a maximum value at ∼2.2 mol dm-3. At concentrations less than 1.8 mol dm-3 the layer thickness decreased sharply, pore diameters became wider and pore walls became narrower until eventually, at 1.1 mol dm -2 or lower, no porous layers were observed. It was also observed that the pore width increased and the inter-pore spacing decreased with decreasing concentration. It is proposed that preferential pore propagation occurs along 〈111〉 directions, contrary to previous suggestions, and that the resulting nanoporous domains, initially formed, have triangular cross-sections when viewed in one of the {110} cleavage planes, 'dove-tail' cross-sections viewed in the orthogonal {110} cleavage plane and square profiles when viewed in the (100) plane of the electrode surface. copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationState-of-the-Art Program on Compound Semiconductors XLIV
PublisherElectrochemical Society Inc.
Pages131-141
Number of pages11
Edition5
ISBN (Electronic)9781566774420
DOIs
Publication statusPublished - 2006
EventState-of-the-Art Program on Compound Semiconductors XLIV 209th Electrochemical Society Meeting - Denver, CO, United States
Duration: 7 May 200612 May 2006

Publication series

NameECS Transactions
Number5
Volume2
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceState-of-the-Art Program on Compound Semiconductors XLIV 209th Electrochemical Society Meeting
Country/TerritoryUnited States
CityDenver, CO
Period7/05/0612/05/06

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